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The STAC3932B is an N-channel enhancement-mode RF power MOSFET manufactured by STMicroelectronics. It utilizes silicon technology and operates within a frequency range up to 250 MHz. The device features a drain-source breakdown voltage (Vds) of 250 V and supports a continuous drain current (Id) of 20 A. Typical performance at 123 MHz includes an output power (Pout) of 580 W with a gain of 24.6 dB. The maximum power dissipation (Pd) is rated at 625 W, with a forward transconductance ranging from 3 S to 5 S. The gate-source voltage (Vgs) limit is +20 V. It is housed in the STAC-244B surface-mount package and operates between -65 °C and +150 °C.
Verify component authenticity through authorized channels. Confirm RoHS compliance status via official documentation. Ensure proper handling due to ESD sensitivity. Validate package integrity upon receipt. Cross-reference datasheet revisions for updated electrical characteristics before integration.
Select based on required operating frequency and output power specifications. Ensure thermal management solutions accommodate the 625 W power dissipation rating. Verify compatibility with 100 V DC supply voltages. Consider the STAC-244B package dimensions for PCB layout constraints. Confirm suitability for push-pull topologies if higher power levels are needed.
This component belongs to the STAC series of RF power transistors from STMicroelectronics. The series focuses on high-performance silicon MOSFETs for radio frequency applications. The STAC3932B specifically targets HF/VHF bands with significant power output capabilities. It represents a specialized solution for broadcast and communication infrastructure.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for direct replacements or evaluate alternatives based on matching Vds, Id, Pout, and package specifications.