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The STAC4932B is an N-channel RF MOSFET transistor manufactured by STMicroelectronics, designed for high-power radio frequency applications. It operates at a frequency of 123 MHz and delivers an output power of up to 1 kW with a gain of 24.6 dB. The device features a drain-source breakdown voltage (Vds) of 200 V and a continuous drain current (Id) of 1 mA. It supports a gate-source voltage (Vgs) of +20 V and has a minimum forward transconductance of 6 S. The component functions within a temperature range of -65 °C to +150 °C and utilizes the STAC244F surface-mount package.
Verify the specific revision and packaging details against the official datasheet before procurement. Confirm availability status as components may be subject to lifecycle changes or obsolescence notices. Ensure compatibility with the intended RF amplifier topology and thermal management requirements.
Select this component for designs requiring high power density at 123 MHz. Consider the STAC244F package constraints for PCB layout and mounting. Evaluate thermal performance under Class AB operation conditions to ensure efficiency targets are met without exceeding junction temperature limits.
The STAC4932B belongs to STMicroelectronics' generation of high-voltage DMOS products housed in the STAC® air cavity package. This series aims to provide lower thermal resistance and reduced cost compared to traditional ceramic packaged devices, enabling higher output powers in compact form factors for demanding RF applications.
The STAC4932F is a related part number within the same family. Verify if the F variant offers different electrical characteristics or packaging options suitable for the specific design requirements.