STAC4932F

$120.75

Description：RF MOSFET 100V STAC244F
Series：-

SKU:b8560ff4ac44 Category: RF FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：RF MOSFET 100V STAC244F
Series：-
Mfr：STMicroelectronics
Package：Tray
Technology：MOSFET (Metal Oxide)
Frequency：123MHz
Gain：26dB
Voltage - Test：100 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：250 mA
Power - Output：1200W
Voltage - Rated：200 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：STAC244F
Supplier Device Package：STAC244F
Configuration：N-Channel

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STAC4932F

Overview

The STAC4932F is an N-channel Silicon RF MOSFET transistor manufactured by STMicroelectronics. It operates at a frequency of 250 MHz with a gain of 24.6 dB and delivers an output power of 1 kW. The device features a drain-source breakdown voltage (Vds) of 200 V and a gate-source voltage (Vgs) of +20 V. Continuous drain current is rated at 1 mA, with a minimum forward transconductance of 6 S. It functions within a temperature range of -65°C to +150°C and is housed in the STAC244F surface-mount package.

Feature Summary

Utilizes optimized process layout for improved RF performance and ruggedness
Features STAC air cavity package technology for lower thermal resistance
Designed for high breakdown voltage and reliability

Applications

Industrial, Scientific and Medical (ISM) applications
FM and TV Broadcast systems
Mobile and wideband communications
Avionics and Radar systems
Telecom and Satellite Communications

Procurement Notes

Verify component status before integration as the STAC4932F is classified as NRND (Not Recommended for New Designs). Confirm availability through authorized distributors and check for end-of-life notifications. Ensure design updates align with manufacturer recommendations to avoid supply chain disruptions for existing products.

Selection Notes

Select this component for high-power RF applications requiring 1 kW output at 123-250 MHz. Consider the 200 V breakdown voltage and STAC244F package constraints. Evaluate thermal management requirements due to the air cavity package characteristics. Compare against newer generations if new designs are initiated, given the NRND status.

Part Context

Part of STMicroelectronics' RF DMOS portfolio, specifically designed for ISM applications up to 250 MHz. The STAC series utilizes innovative air cavity packaging to enhance performance and reliability compared to standard ceramic packages. This model represents a high-voltage solution within the broader family of RF power transistors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the NRND status, consult STMicroelectronics for recommended alternatives or next-generation replacements suitable for specific RF power requirements.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.