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The START499ETR is an NPN RF silicon transistor manufactured using STMicroelectronics' third-generation bipolar process. It operates in the SOT-343 (SC-70) lead-free package and supports frequencies up to 5 GHz with a transition frequency of 42 GHz. Key electrical parameters include a collector-emitter voltage of 4.5 V, a collector current of 600 mA, and a total dissipation of 600 mW at 60 °C case temperature. At 1.8 GHz with IC = 200 mA and VCE = 3 V, it delivers a power gain of 15 dB, a noise figure of 3.3 dB, and a P-1dB compression point of 23.5 dBm.
Verify component authenticity by checking the marking code E99 on the device body against official documentation. Confirm the package type is SOT-343 and that the unit is supplied in tape and reel packaging. Ensure the procurement source provides valid traceability data consistent with STMicroelectronics standards.
Select this component when a small form factor is required for RF circuits operating up to 5 GHz. The device offers GaAs-equivalent performance levels within a silicon process. Consider the 4.5 V breakdown voltage and 600 mA current limits during circuit design to ensure safe operating area compliance.
The START499ETR belongs to the START family of transistors designed to provide state-of-the-art silicon RF solutions. Manufactured using a specialized bipolar process, this series aims to deliver high power, gain, and efficiency in the smallest available packages for given breakdown voltages.
No public confirmed substitute part numbers are documented in the provided datasheet.
The transition frequency is 42 GHz.
The absolute maximum collector-emitter voltage (VCEO) is 4.5 V.
The SOT-343 package has four leads: Pin 1 is Base, Pin 3 is Collector, and Pins 2 and 4 are Emitters.