STB11N52K3

Single FETs, MOSFETs Overview

The STB11N52K3 is an N-channel Power MOSFET manufactured using SuperMESH3™ technology, offering a drain-source voltage of 525 V and a maximum on-resistance of 0.51 Ω at 10 V gate drive. It supports a continuous drain current of 10 A at 25 °C case temperature and delivers up to 125 W total dissipation in the D²PAK package. The device features integrated back-to-back Zener diodes for gate protection, high dv/dt capability, and improved reverse recovery characteristics.

Single FETs, MOSFETs Feature Summary

• SuperMESH3™ technology provides extremely low on-resistance and superior dynamic performance
• Integrated back-to-back Zener diodes protect against ESD and voltage transients without external components
• High avalanche capability with 100% avalanche testing
• Optimized vertical structure ensures very low intrinsic capacitance and minimized gate charge

Single FETs, MOSFETs Applications

• Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required (D²PAK, TO-220FP, or TO-220) as electrical ratings like power dissipation vary by housing. Confirm environmental compliance grades such as ECOPACK® specifications before ordering. Ensure thermal management design accounts for the distinct junction-to-case resistance values associated with each package type to maintain safe operating temperatures.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage switching designs requiring robust avalanche endurance and fast dynamic response. The 525 V rating suits industrial and power supply topologies. Consider the D²PAK package for higher power handling or TO-220 variants for through-hole mounting. Verify that the gate drive circuitry aligns with the specified threshold voltage and gate charge requirements for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the STB11N52K3, STF11N52K3, and STP11N52K3 family of N-channel Power MOSFETs. All variants share identical electrical characteristics but differ in physical packaging: D²PAK (STB), TO-220FP (STF), and TO-220 (STP). The family utilizes STMicroelectronics' SuperMESH3™ technology to achieve low RDS(on) and high reliability in demanding power switching environments.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include STF11N52K3 (TO-220FP package) and STP11N52K3 (TO-220 package). These parts share identical electrical parameters but require compatible mechanical footprints. Cross-family replacements must match the 525 V rating, 10 A current capacity, and SuperMESH3™ performance characteristics.