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STB46N30M5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 300V 53A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STB46N30M5
- Description：MOSFET N-CH 300V 53A D2PAK
- Series：MDmesh™ V
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：300 V
- Current - Continuous Drain (Id) @ 25°C：53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：40mOhm @ 26.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：95 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：4240 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：250W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for STB46N30M5
Single FETs, MOSFETs Overview
The STB46N30M5 is an automotive-grade N-channel Power MOSFET utilizing MDmesh M5 technology. It features a 300 V drain-source voltage, 53 A continuous drain current, and 40 mOhm typical on-resistance. The device operates within a -55 C to +150 C junction temperature range with 250 W power dissipation in a D2PAK-3 package.
Single FETs, MOSFETs Feature Summary
- AEC-Q101 qualified for automotive reliability
- Extremely low R DS(on) for high efficiency
- High dv/dt capability
- Low gate charge and input capacitance
Single FETs, MOSFETs Applications
- Advanced high-efficiency isolated DC-DC converters
- Telecom power supplies
- Computer application power systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your specific automotive application environment before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring high breakdown voltage combined with low conduction losses. The MDmesh M5 process offers superior switching performance compared to standard technologies. Ensure the thermal design accommodates the specified power dissipation limits in the chosen package configuration.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh M5 family of power MOSFETs from STMicroelectronics. It represents an evolution in vertical process technology combined with horizontal layout techniques. The series targets applications demanding high power density and superior efficiency in compact form factors.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible alternatives within the same MDmesh M5 family or other ST automotive-grade N-channel MOSFETs with matching 300 V ratings. Verify that any substitute maintains equivalent avalanche testing qualifications and thermal characteristics.
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