STB4N80ET4

Overview

The STB4N80ET4 is an N-channel silicon power MOSFET manufactured by onsemi, designed for high-voltage switching applications. It features a breakdown voltage (V_DSS) of 800 V and a continuous drain current (I_D) of 4 A at 25°C case temperature. The device exhibits a maximum on-resistance (R_DS(on)) of 3.3 Ω when measured at a gate-source voltage of 10 V and a drain current of 1.5 A. It is housed in a D2PAK-3 surface-mount package, which facilitates efficient thermal management for power conversion circuits.

Feature Summary

• High-voltage capability with 800 V drain-source breakdown rating suitable for offline power supplies
• Optimized on-resistance characteristics to minimize conduction losses in switching applications
• Integrated body diode providing inherent freewheeling functionality for inductive loads

Applications

• Offline flyback converters
• High-voltage DC-DC converter stages
• General-purpose high-voltage switching circuits

Procurement Notes

Verify the manufacturer marking and date code against official onsemi distribution channels to ensure authenticity. Confirm that the D2PAK-3 package dimensions match the target PCB footprint specifications. Check for RoHS compliance documentation if environmental regulations apply to the end product assembly process.

Selection Notes

Select this component when an 800 V rating is required for primary-side switching or high-voltage secondary rectification. Compare the 3.3 Ω R_DS(on) against circuit loss calculations to ensure thermal performance remains within limits. Consider the D2PAK-3 package for its balance of current handling capacity and surface-mount assembly convenience compared to through-hole alternatives.

Part Context

This part belongs to the family of high-voltage N-channel MOSFETs from onsemi, utilizing advanced planar technology. It serves as a robust solution for isolated power supply designs where high voltage isolation and moderate current levels are necessary. The device complements other components in AC-DC and DC-DC conversion topologies requiring reliable high-voltage switching.

Replacement Considerations

Direct substitutes include the STF4N80K5 and STB4NB80T4, which offer similar 800 V ratings and comparable on-resistance values. Verify pinout compatibility and thermal resistance parameters before substituting to ensure equivalent performance in the existing circuit design.