ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
STB50NE10T4 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 100V 50A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STB50NE10T4
- Description：MOSFET N-CH 100V 50A D2PAK
- Series：STripFET™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：27mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：166 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：180W (Tc)
- Operating Temperature：-65°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for STB50NE10T4
Single FETs, MOSFETs Overview
The STB50NE10T4 is an N-channel Power MOSFET from the STripFET series, manufactured by STMicroelectronics. It features a maximum drain-source voltage (V_DSS) of 100 V and a continuous drain current (I_D) of 50 A at case temperature. The device exhibits a low on-state resistance (R_DS(on)) of 0.021 Ω. Packaged in a D2PAK surface-mount enclosure, it is designed for high-efficiency power switching applications.
Single FETs, MOSFETs Feature Summary
- Utilizes STripFET technology to achieve exceptionally low on-resistance for improved efficiency.
- Features exceptional dv/dt capability for robust performance in fast-switching environments.
- Subjected to 100% avalanche testing to ensure reliability under transient stress conditions.
Single FETs, MOSFETs Applications
- DC-DC converters
- Power switching circuits
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the T4 suffix to confirm the specific tape-and-reel packaging configuration. Ensure compatibility with the D2PAK footprint during PCB layout. Confirm that the thermal management design supports the specified power dissipation ratings under intended operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V rating and 50 A current capacity are required in a D2PAK package. The low R_DS(on) makes it suitable for applications prioritizing conduction loss reduction. Verify that the gate charge characteristics align with the driving circuit capabilities for optimal switching performance.
Single FETs, MOSFETs Part Context
This device belongs to the STB50NE10 family of N-channel MOSFETs. It shares the same electrical specifications as other variants within the series but differs in packaging or reel configuration. The STripFET technology distinguishes it from standard planar MOSFETs by offering lower on-resistance per unit area.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include STB50NE10 and STB50NE10L, which share identical electrical parameters. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement part meets the same avalanche testing standards.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
