STB6N62K3

$0.56

Description：MOSFET N-CH 620V 5.5A D2PAK
Series：SuperMESH3™
Mfr：STMicroelectronics
Package：Tape & Reel (TR)

SKU:af454222958d Category: Single FETs, MOSFETs Brand: STMicroelectronics

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

STB6N62K3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 620V 5.5A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STB6N62K3

Description：MOSFET N-CH 620V 5.5A D2PAK
Series：SuperMESH3™
Mfr：STMicroelectronics
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：620 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id：4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：875 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：90W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for STB6N62K3

STB6N62K3

Single FETs, MOSFETs Overview

The STB6N62K3 is an N-channel SuperMESH3 Power MOSFET in a D²PAK (TO-263) package. It features a drain-source voltage of 620 V, continuous drain current of 5.5 A at 25 °C, and maximum power dissipation of 90 W. The typical on-resistance is 0.95 Ω with a maximum of 1.2 Ω at VGS = 10 V. Gate charge is typically 34 nC at VGS = 10 V. Operating junction temperature ranges from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

100% avalanche tested for high reliability
Extremely high dv/dt capability
Minimized gate charge and very low intrinsic capacitance
Improved diode reverse recovery characteristics
Integrated Zener protection

Single FETs, MOSFETs Applications

Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant against the datasheet, as the STB6N62K3 designation corresponds to the D²PAK (TO-263) form factor. Confirm that the ordering suffix matches the tape and reel packaging specifications provided in the official documentation. Ensure the component grade aligns with industrial requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling up to 620 V combined with robust avalanche energy capabilities. The optimized vertical structure provides superior dynamic performance suitable for demanding switching environments. Evaluate thermal resistance parameters to ensure adequate heat dissipation within the specified operating temperature range.

Single FETs, MOSFETs Part Context

This device belongs to the SuperMESH3™ series, representing improvements over previous MDmesh technology. It utilizes a new optimized vertical structure to achieve extremely low on-resistance and high avalanche capability. The integrated back-to-back Zener diodes enhance ESD capability and protect against voltage transients without external components.