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The STC6NF30V is an N-channel enhancement-mode Power MOSFET from the STripFET II series, manufactured by STMicroelectronics. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 6 A. The device utilizes a TSSOP-8 surface-mount package with a height of 2.5 mm drive capability. Key electrical parameters include a maximum on-state resistance (Rds(on)) of 20 mΩ at Vgs = 10 V, and a typical gate charge (Qg) of 4 nC at Vgs = 10 V. It operates within a temperature range of -55°C to +150°C and offers high dv/dt capability.
Verify the specific ordering suffix and tape/reel configuration when sourcing components. Confirm that the received devices match the STC6NF30V designation and STMicroelectronics origin. Check datasheet revisions for any updates to thermal or electrical limits before final integration.
Select this component for applications requiring low gate charge and high efficiency in small packages. Ensure the operating voltage does not exceed 30 V and current stays within 6 A limits. Consider the TSSOP-8 thermal performance for heat dissipation requirements in dense PCB layouts.
This part belongs to STMicroelectronics' medium-voltage N-channel MOSFET portfolio, ranging from 30 V to 350 V. It is designed for industrial and automotive applications, leveraging the Single Feature Size process for manufacturing reproducibility and ruggedness.
Direct substitutes must maintain 30 V Vds, 6 A Id, and TSSOP-8 packaging. Verify equivalent Rds(on) and Qg values to ensure circuit compatibility. Cross-reference with other STripFET II variants if pinout or thermal characteristics differ.