STC6NF30V

STC6NF30V

$0.46
  • Description:MOSFET 2N-CH 30V 6A 8TSSOP
  • Series:STripFET™ II

SKU:1ad1bb70836d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 6A 8TSSOP
  • Series:STripFET™ II
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6A
  • Rds On (Max) @ Id, Vgs:25mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id:600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds:800pF @ 25V
  • Power - Max:1.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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STC6NF30V

Overview

The STC6NF30V is an N-channel enhancement-mode Power MOSFET from the STripFET II series, manufactured by STMicroelectronics. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 6 A. The device utilizes a TSSOP-8 surface-mount package with a height of 2.5 mm drive capability. Key electrical parameters include a maximum on-state resistance (Rds(on)) of 20 mΩ at Vgs = 10 V, and a typical gate charge (Qg) of 4 nC at Vgs = 10 V. It operates within a temperature range of -55°C to +150°C and offers high dv/dt capability.

Feature Summary

  • STripFET II technology for minimized input capacitance and gate charge
  • High packing density resulting in low on-resistance
  • Rugged avalanche characteristics with 100% avalanche testing
  • Exceptional dv/dt capability suitable for fast switching applications

Applications

  • Primary switches in advanced high-efficiency isolated DC-DC converters
  • Low-voltage power management circuits
  • Industrial control systems requiring compact surface-mount solutions

Procurement Notes

Verify the specific ordering suffix and tape/reel configuration when sourcing components. Confirm that the received devices match the STC6NF30V designation and STMicroelectronics origin. Check datasheet revisions for any updates to thermal or electrical limits before final integration.

Selection Notes

Select this component for applications requiring low gate charge and high efficiency in small packages. Ensure the operating voltage does not exceed 30 V and current stays within 6 A limits. Consider the TSSOP-8 thermal performance for heat dissipation requirements in dense PCB layouts.

Part Context

This part belongs to STMicroelectronics' medium-voltage N-channel MOSFET portfolio, ranging from 30 V to 350 V. It is designed for industrial and automotive applications, leveraging the Single Feature Size process for manufacturing reproducibility and ruggedness.

Replacement Considerations

Direct substitutes must maintain 30 V Vds, 6 A Id, and TSSOP-8 packaging. Verify equivalent Rds(on) and Qg values to ensure circuit compatibility. Cross-reference with other STripFET II variants if pinout or thermal characteristics differ.

STC6NF30VSTC6NF30V
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