STD60NF06T4

$1.98

Description：MOSFET N-CH 60V 60A DPAK
Series：STripFET™ II
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:73a658ab7d8e Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STD60NF06T4 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 60V 60A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STD60NF06T4

Description：MOSFET N-CH 60V 60A DPAK
Series：STripFET™ II
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1810 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for STD60NF06T4

STD60NF06T4

Single FETs, MOSFETs Overview

The STD60NF06T4 is an N-channel 60 V, 60 A STripFET II Power MOSFET in a DPAK package. It features a maximum drain-source on-resistance of 0.016 Ω and a typical value of 0.014 Ω at VGS = 10 V and ID = 30 A. The device has a gate threshold voltage ranging from 2 V to 4 V and a total gate charge of up to 66 nC. Absolute maximum ratings include a continuous drain current of 60 A at TC = 25 °C, a pulsed drain current of 240 A, and a total dissipation of 110 W at TC = 25 °C. Thermal resistance junction-to-case is 1.36 °C/W.

Single FETs, MOSFETs Feature Summary

Developed using the unique STripFET process designed to minimize input capacitance and gate charge for efficient switching.
Features exceptional dv/dt capability and is 100% avalanche tested for rugged performance.
Suitable for primary switching in advanced high-efficiency isolated DC-DC converters.

Single FETs, MOSFETs Applications

Primary switch in advanced high-efficiency isolated DC-DC converters
Telecom applications
Computer applications
Applications with low gate charge driving requirements

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code STD60NF06T4 against the manufacturer's official datasheet DS12568 to confirm active status and exact electrical tolerances. Ensure the DPAK (TO-252) package type matches the design footprint. Confirm environmental compliance specifications such as ECOPACK grades if required by the target application standards before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V breakdown voltage and 60 A continuous current capacity are required in a surface-mount DPAK package. The low gate charge characteristics make it appropriate for designs prioritizing fast switching speeds and reduced driver power consumption. Verify that the thermal management solution can handle the specified junction-to-case thermal resistance of 1.36 °C/W under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET II series of N-channel Power MOSFETs from STMicroelectronics. The series utilizes a strip-based process technology aimed at achieving high packing density and low on-resistance. The STD60NF06T4 variant specifically targets medium-voltage applications requiring robust avalanche characteristics and reliable performance in isolated power conversion topologies.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's portfolio for alternative parts within the same voltage and current class if pin compatibility or specific thermal parameters differ. Cross-reference absolute maximum ratings and on-resistance values to ensure equivalent or superior performance in the intended circuit topology.