STD9NM50N-1

Single FETs, MOSFETs Overview

The STD9NM50N-1 is an N-channel enhancement mode Power MOSFET from the MDmesh™ second-generation series. It features a maximum drain-source voltage of 500V and a continuous drain current of 7.5A at 25°C case temperature. The device exhibits a static drain-source on-resistance of 0.47Ω typical and 0.56Ω maximum. Packaged in IPAK (TO-251), it supports a total power dissipation of 25W at 25°C. Key electrical parameters include a gate threshold voltage of 2 to 4V, total gate charge of 20nC, and avalanche energy capability of 150mJ.

Single FETs, MOSFETs Feature Summary

• Implements second generation MDmesh technology combining vertical structure with strip layout for low on-resistance and gate charge
• Features 100% avalanche testing for enhanced ruggedness in switching applications
• Designed for high efficiency converters requiring low input capacitance and low gate input resistance

Single FETs, MOSFETs Applications

• High efficiency DC-DC converters
• General purpose switching applications
• Power supply circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm the specific IPAK package marking D9NM50N matches the datasheet specifications. Check for ECOPACK lead-free compliance if environmental standards are required. Ensure the obsolete status does not conflict with long-term production requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a 500V rating and 7.5A continuous current capacity are required in a surface-mount IPAK package. Consider the thermal resistance of 5°C/W junction-to-case for heat sink design. Evaluate the 20nC gate charge against driver capabilities for optimal switching performance. Compare against other MDmesh variants if different packaging options like TO-220 or DPAK are preferred.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh family of Power MOSFETs developed by STMicroelectronics. The MDmesh technology utilizes a patented strip layout to minimize cell pitch and improve breakdown voltage characteristics. This specific model represents the second generation of this architecture, offering improved figures of merit compared to earlier discrete MOSFET designs.

Single FETs, MOSFETs Replacement Considerations

Compatible replacements within the same series include STD9NM50N (DPAK package) and STF9NM50N (TO-220FP package). Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with other manufacturers' 500V N-channel MOSFETs ensuring identical RDS(on) and Qg values.