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STF11N60M2-EP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 7.5A TO220FP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STF11N60M2-EP
- Description：MOSFET N-CH 600V 7.5A TO220FP
- Series：MDmesh™ M2-EP
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：595mOhm @ 3.75A, 10V
- Vgs(th) (Max) @ Id：4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.4 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：390 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FP
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for STF11N60M2-EP
Single FETs, MOSFETs Overview
The STF11N60M2-EP is an N-channel Power MOSFET developed using MDmesh M2 Enhanced Performance technology. It features a 600 V drain-source voltage, a typical on-resistance of 0.550 Ohms, and a continuous drain current of 7.5 A. The device utilizes a TO-220FP package for through-hole mounting. Key electrical characteristics include a gate charge of 12.5 nC, a threshold voltage of 3 V, and a power dissipation rating of 25 W. Operating temperatures range from -55 C to +150 C.
Single FETs, MOSFETs Feature Summary
- MDmesh M2 Enhanced Performance technology provides low on-resistance and optimized switching characteristics with very low turn-off switching losses.
- Strip layout and improved vertical structure render the device suitable for demanding very high frequency converters.
- Features extremely low gate charge and an excellent output capacitance profile.
Single FETs, MOSFETs Applications
- Very high frequency converters operating above 150 kHz
- General-purpose power switching applications
Single FETs, MOSFETs Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the specific EP suffix indicates Enhanced Performance status. Ensure the TO-220FP package matches design requirements. Validate RoHS compliance documentation prior to integration into production systems.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust performance in high-frequency environments. The enhanced performance technology offers advantages in efficiency due to reduced switching losses. Consider the thermal management capabilities of the TO-220FP package when designing heat sinks. Verify that the 600 V rating aligns with system voltage constraints.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh M2 family of power MOSFETs from STMicroelectronics. The series is characterized by advanced silicon technologies aimed at improving power conversion efficiency. The EP designation signifies Enhanced Performance variants within this lineup, offering optimized electrical parameters compared to standard versions.
Single FETs, MOSFETs Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult official STMicroelectronics documentation for cross-reference information or contact the manufacturer directly for compatible alternatives.
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