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STF19NM50N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 500V 14A TO220FP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STF19NM50N
- Description：MOSFET N-CH 500V 14A TO220FP
- Series：MDmesh™ II
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：250mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1000 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FP
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for STF19NM50N
Single FETs, MOSFETs Overview
The STF19NM50N is an N-channel Power MOSFET developed using the second generation of MDmesh technology. It features a vertical structure combined with a strip layout to achieve low on-resistance and gate charge. The device has a maximum drain-source voltage (Vdss) of 500 V, a continuous drain current (Id) of 14 A, and a typical on-resistance (Rds(on)) of 0.2 Ohm. It is housed in a TO-220FP package.
Single FETs, MOSFETs Feature Summary
- Developed using the second generation of MDmesh technology for high efficiency
- Associates a vertical structure with a strip layout to minimize on-resistance and gate charge
- Suitable for demanding high-efficiency converters
- 100% avalanche tested
Single FETs, MOSFETs Applications
- High-efficiency power converters
Single FETs, MOSFETs Procurement Notes
Verify the specific part number against official STMicroelectronics documentation to confirm active status and exact electrical parameters. Ensure the TO-220FP package variant matches design requirements. Cross-reference datasheet revisions for any updates to thermal or electrical characteristics before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-voltage handling and efficient switching performance. The MDmesh II technology offers a balance of low conduction losses and reduced gate drive requirements. Consider the TO-220FP package for through-hole mounting solutions where space and thermal management are balanced priorities.
Single FETs, MOSFETs Part Context
This device belongs to the MDmesh family of power MOSFETs from STMicroelectronics. The MDmesh series utilizes proprietary strip layout technology to optimize performance metrics such as on-resistance and gate charge. This specific model represents the second generation of this technology, targeting improved efficiency in power conversion systems.
Single FETs, MOSFETs Replacement Considerations
Consult official STMicroelectronics substitution guides for verified alternatives. Generic replacements may not match the specific MDmesh II characteristics or package dimensions.
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