ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
STF28N60M2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 24A TO220FP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STF28N60M2
- Description：MOSFET N-CH 600V 24A TO220FP
- Series：MDmesh™ II Plus
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1370 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FP
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for STF28N60M2
Single FETs, MOSFETs Overview
STF28N60M2 is an N-channel Power MOSFET from STMicroelectronics utilizing MDmesh M2 technology. It features a TO-220FP (TO-220-3) through-hole package with a drain-source voltage of 600 V and continuous drain current of 24 A at case temperature. The typical on-resistance is 120 mOhms, with a maximum of 150 mOhms at 10 V gate drive. Gate charge is 37 nC, threshold voltage ranges from 2 V to 4 V, and power dissipation is rated at 30 W. Operating temperature spans -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- MDmesh M2 technology provides low on-resistance and optimized switching characteristics for high-efficiency converters.
- Extremely low gate charge and excellent output capacitance profile reduce switching losses.
- 100% avalanche tested for robustness under inductive load conditions.
- Integrated Zener protection between gate and source prevents overvoltage damage.
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- General-purpose power switching applications
- Inductive load switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a balance of low conduction loss and fast switching in single-channel configurations. Ensure the thermal management solution supports the 30 W dissipation rating at the intended operating junction temperature within the specified range.
Single FETs, MOSFETs Part Context
The STF28N60M2 belongs to the MDmesh M2 series of N-channel enhancement mode MOSFETs. This family utilizes a strip layout and improved vertical structure to achieve superior performance metrics compared to standard planar technologies, targeting demanding power conversion environments.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible alternatives within the same MDmesh M2 series, such as devices with adjusted current or resistance ratings, ensuring identical package dimensions and electrical characteristics match the original design requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
