STF2HNK60Z

Single FETs, MOSFETs Overview

The STF2HNK60Z is a Zener-protected N-channel Power MOSFET utilizing SuperMESH technology, optimized for high-voltage applications. It features a 600 V drain-source voltage rating and a continuous drain current of 2 A at 25 °C case temperature. The device exhibits a typical on-resistance of 3.5 Ω with a maximum of 4.8 Ω at VGS = 10 V. Key electrical parameters include a gate threshold voltage ranging from 3 V to 4.5 V, total gate charge of 11 nC typ., and input capacitance of 280 pF. Thermal resistance junction-to-case is 6.25 °C/W, supporting up to 20 W power dissipation.

Single FETs, MOSFETs Feature Summary

• SuperMESH technology optimization providing significantly reduced on-resistance and high dv/dt capability
• Integrated Zener protection between gate and source terminals
• 100% avalanche tested for robustness in demanding switching environments
• Minimized gate charge and very low intrinsic capacitances for efficient switching

Single FETs, MOSFETs Applications

• General switching applications
• High-voltage power conversion circuits
• Inductive load switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code STF2HNK60Z against the latest STMicroelectronics datasheet DS13846 to confirm package type (TO-220FP) and packing method (Tube). Ensure design requirements align with absolute maximum ratings, particularly the 600 V breakdown voltage and thermal constraints. Confirm environmental compliance status via ECOPACK specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 600 V rated N-channel MOSFET with integrated gate protection. The TO-220FP package facilitates heat sinking for moderate power levels. Consider the 3.5 Ω typical on-resistance and 2 A continuous current limit when sizing thermal management solutions. Verify that the application's switching frequency and voltage stress remain within the specified safe operating area and avalanche energy limits.

Single FETs, MOSFETs Part Context

Part of the SuperMESH series by STMicroelectronics, an evolution of the PowerMESH layout designed for high-voltage performance. This series complements other ST power MOSFET portfolios like MDmesh, focusing on optimizing on-resistance while maintaining excellent dv/dt handling capabilities for industrial and general-purpose power electronics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other SuperMESH devices such as STD2HNK60Z or STF4LNK60Z if different packages or current ratings are required. Verify pinout compatibility and thermal characteristics when substituting. Ensure any replacement maintains the 600 V rating and Zener protection feature if present in the original design.