STGB10H60DF

STGB10H60DF

$1.99
  • Description:IGBT TRENCH FS 600V 20A TO-263
  • Series:-

SKU:93351a6eeb91 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 20A TO-263
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):20 A
  • Current - Collector Pulsed (Icm):40 A
  • Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 10A
  • Power - Max:115 W
  • Switching Energy:83µJ (on), 140µJ (off)
  • Input Type:Standard
  • Gate Charge:57 nC
  • Td (on/off) @ 25°C:19.5ns/103ns
  • Test Condition:400V, 10A, 10Ohm, 15V
  • Reverse Recovery Time (trr):107 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263 (D2PAK)
  • Grade:-
  • Qualification:-

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STGB10H60DF

Overview

The STGB10H60DF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the H series, manufactured by STMicroelectronics. It utilizes an advanced trench gate field-stop structure on silicon technology. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 10 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 88 W. It operates within a temperature range of -55°C to +150°C and is available in surface-mount packaging.

Feature Summary

  • High-speed switching capability optimized for high-frequency converters
  • Tight parameter distribution enabling safer paralleling operation
  • Slightly positive VCE(sat) temperature coefficient for thermal stability
  • Integrated ultrafast soft recovery antiparallel diode

Applications

  • High-switching frequency motor drives
  • Switched-mode power supplies (SMPS)
  • Induction heating systems

Part Context

This component belongs to the STMicroelectronics H series IGBTs, which are engineered to balance conduction and switching losses. The series design prioritizes efficiency in high-frequency applications while maintaining robust performance through tight manufacturing tolerances and safe operating characteristics for parallel configurations.

Replacement Considerations

Verify pinout compatibility and thermal resistance requirements when substituting. Check datasheet specifications for VCEO, IC, and VCE(sat) to ensure equivalent performance in the target circuit application.

STGB10H60DFSTGB10H60DF
$1.99
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