ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 25A 80W D2PAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 7A
- Power - Max：80 W
- Switching Energy：82µJ (on), 155µJ (off)
- Input Type：Standard
- Gate Charge：34.4 nC
- Td (on/off) @ 25°C：22.5ns/116ns
- Test Condition：390V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
Download product information
Overview
The STGB14NC60KT4 is a very fast N-channel Insulated Gate Bipolar Transistor (IGBT) developed using advanced PowerMESH technology. It features a collector-emitter voltage of 600 V and a continuous collector current of 14 A at 25 °C. The device includes an integrated ultra-fast recovery antiparallel diode with a reverse recovery time of 37 ns. It offers a low on-state voltage drop, a short-circuit withstand time of 10 μs, and operates within a junction temperature range of -55 to 150 °C.
Feature Summary
- Advanced PowerMESH technology ensures excellent trade-off between switching performance and low on-state behavior
- Very soft ultra-fast recovery antiparallel diode minimizes cross-conduction susceptibility
- Short-circuit rugged design supports 10 μs withstand time under specified conditions
Applications
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drives
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Ensure compatibility with existing thermal management designs given the 80 W total power dissipation rating. Confirm RoHS compliance status for environmental regulations. Cross-reference datasheet revision dates to validate electrical parameter consistency before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high-frequency operation and soft-switching capabilities. The low C_res / C_ies ratio makes it suitable for circuits susceptible to cross-conduction. Evaluate thermal resistance requirements based on the D²PAK or TO-220FP package options available within the series. Consider the 10 μs short-circuit tolerance for robust protection schemes.
Part Context
This IGBT belongs to the STGx14NC60 family, which utilizes PowerMESH technology for optimized performance. Related part numbers include STGF14NC60KD and STGP14NC60KD, offering similar electrical characteristics with variations in packaging such as TO-220 or TO-220FP. These devices are designed for industrial and consumer applications demanding efficient power conversion.
Replacement Considerations
Direct substitutes within the same series include STGF14NC60KD and STGP14NC60KD. Verify pinout compatibility and thermal pad configurations when replacing components. Ensure that the alternative package meets the mechanical constraints of the original design.
