STGB20H65FB2

$0.55

Description：IGBT TRENCH FS 650V 40A TO-263
Series：HB2

SKU:d0c5323afe2a Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 40A TO-263
Series：HB2
Mfr：STMicroelectronics
Package：Tape & Reel (TR)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
Power - Max：147 W
Switching Energy：265µJ (on), 214µJ (off)
Input Type：Standard
Gate Charge：56 nC
Td (on/off) @ 25°C：16ns/78.8ns
Test Condition：400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263 (D2PAK)
Grade：-
Qualification：-

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STGB20H65FB2

Overview

The STGB20H65FB2 is a single N-channel IGBT from the HB2 series, utilizing trench gate field-stop technology in a D²PAK (TO-263) package. It features a collector-emitter voltage of 650 V and a continuous collector current of 40 A at 25 °C case temperature. The device exhibits a typical saturation voltage of 1.65 V at 20 A and supports a maximum junction temperature of 175 °C. Key electrical parameters include a total power dissipation of 147 W at 25 °C, a thermal resistance junction-to-case of 1.02 °C/W, and a gate-emitter voltage rating of ±20 V.

Feature Summary

Evolution of proprietary trench gate field-stop structure for optimized conduction and reduced switching energy
Positive VCE(sat) temperature coefficient for safe parallel operation
Minimized tail current to enhance switching performance
Tight parameter distribution for consistent manufacturing quality

Applications

Welding equipment
Single-phase input PFC converters
String and central solar inverters
Uninterruptible power supplies (UPS)
DC fast charging stations for electric vehicles

Procurement Notes

Verify the specific ordering code STGB20H65FB2 against the manufacturer's official documentation to ensure correct part identification. Confirm that the required packing format matches the tape and reel specification provided in the datasheet. Cross-reference the RoHS compliance status with the latest ECOPACK environmental specifications before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high-speed switching capabilities within the 650 V range. Ensure the thermal management system can maintain the case temperature within limits to support the specified 40 A continuous current rating. Consider the 1.02 °C/W thermal resistance junction-to-case value for accurate heat sink sizing calculations during the design phase.

Part Context

This device belongs to the HB2 series of IGBTs, representing an evolution of advanced trench gate field-stop structures. It is designed to maximize efficiency for fast applications through improved VCE(sat) behavior at low currents and reduced switching energy. The product is manufactured by STMicroelectronics and utilizes silicon technology.