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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 40A TO-263
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 20A
- Power - Max：167 W
- Switching Energy：200µJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：116 nC
- Td (on/off) @ 25°C：38ns/149ns
- Test Condition：400V, 20A, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
STGB20V60F is a single silicon Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, utilizing TrenchGate FieldStop technology. It features a collector-emitter voltage of 600 V and a continuous collector current of 20 A at 25°C. The device operates within a temperature range of -55°C to +175°C, with a maximum power dissipation of 167 W. Packaged in a D2PAK-3 surface-mount format, it offers a typical collector-emitter saturation voltage of 1.85 V.
Feature Summary
- Integrates an advanced proprietary trench gate field-stop structure for optimized switching performance.
- Includes a built-in ultra-fast soft recovery antiparallel diode for efficient high-speed applications.
- Features tight parameter distribution to ensure safe paralleling operation.
Applications
- High-frequency motor drives
- Switch-mode power supplies
- DC-DC converters
Procurement Notes
Verify the specific datasheet revision and ordering suffixes, as STMicroelectronics frequently updates component specifications. Confirm that the D2PAK-3 package variant matches your PCB footprint requirements. Check for any End-of-Life notices or alternative part recommendations directly from the manufacturer's official documentation before finalizing procurement plans.
Selection Notes
Select this component when a low on-state voltage drop and fast switching speed are required in a compact surface-mount package. The integrated anti-parallel diode simplifies circuit design by eliminating the need for external freewheeling diodes in half-bridge configurations. Ensure thermal management strategies account for the 167 W power dissipation rating under appropriate heat sinking conditions.
Part Context
The STGB20V60F belongs to the V60 series of IGBTs, which are designed for general-purpose industrial applications. This series leverages TrenchGate FieldStop technology to achieve a balance between conduction losses and switching energy. It serves as a surface-mount alternative to through-hole packages like TO-220, facilitating automated assembly in modern electronics manufacturing.
Replacement Considerations
Official substitutes include STGW20V60F (TO-247 package) and STGP20V60F (TO-220 package). These parts share identical electrical characteristics but differ in physical mounting style. Verify pinout compatibility and thermal resistance differences when transitioning between package types.
