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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 60A TO-263
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：260 W
- Switching Energy：393µJ (off)
- Input Type：Standard
- Gate Charge：149 nC
- Td (on/off) @ 25°C：-/146ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The STGB30H60DLFB is a single-channel Silicon Insulated Gate Bipolar Transistor (IGBT) from the HB series, utilizing trench gate field-stop technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 60 A at 25°C. The device exhibits a typical saturation voltage of 1.55 V and supports a power dissipation of 260 W. Operating within a temperature range of -55°C to +175°C, it is housed in a D2PAK-3 surface-mount package.
Feature Summary
- Trench gate field-stop structure for optimized switching performance
- Positive VCE(sat) temperature coefficient enabling safe paralleling
- Ultrafast soft recovery antiparallel diode integration
Applications
- High-speed frequency converters
- Industrial motor drives
- Switched-mode power supplies
Procurement Notes
This component has reached End-of-Life status, indicating that STMicroelectronics will discontinue manufacturing. Verification of final shipment dates and last-time buy windows is essential before design commitment. Sourcing should focus on authorized distributors with traceable history to ensure authenticity, as availability is limited to existing stock or surplus channels.
Selection Notes
Designers should evaluate the trade-off between the 1.55 V saturation voltage and switching losses inherent to the HB series architecture. The D2PAK-3 package requires adequate thermal management to handle the 260 W dissipation rating. Verify that the 600 V blocking capability aligns with system voltage spikes and that the 175°C junction temperature limit fits the application's thermal envelope.
Part Context
Part of the HB series IGBT lineup, this device targets high-efficiency applications requiring a balance between conduction and switching losses. It shares architectural similarities with other trench-gate devices but is distinguished by its specific voltage and current ratings within the 600 V class family.
Replacement Considerations
STGB30H60DLLFBAG is an automotive-grade equivalent with AEC-Q101 qualification. Note that the DLLFB variant specifies a higher saturation voltage of 1.7 V compared to the 1.55 V of the DLFB version.
