STGB30M65DF2

$3.02

Description：IGBT TRENCH FS 650V 60A TO-263
Series：-

SKU:c6efecb38690 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 60A TO-263
Series：-
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
Power - Max：258 W
Switching Energy：300µJ (on), 960µJ (off)
Input Type：Standard
Gate Charge：80 nC
Td (on/off) @ 25°C：31.6ns/115ns
Test Condition：400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：140 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263 (D2PAK)
Grade：-
Qualification：-

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STGB30M65DF2

Overview

The STGB30M65DF2 is a single N-channel IGBT from the M series, utilizing trench gate field-stop technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 60 A at 25 °C case temperature. The typical saturation voltage is 1.55 V at 30 A. It supports a maximum junction temperature of 175 °C and offers a minimum short-circuit withstand time of 6 µs. The device is housed in a D²PAK (TO-263) package with tape and reel packing.

Feature Summary

Advanced trench gate field-stop structure for low-loss performance
Positive VCE(sat) temperature coefficient enabling safer paralleling
Soft and very fast-recovery antiparallel diode
Tight parameter distribution for consistent system behavior

Applications

Motor control
UPS systems
PFC circuits
General purpose inverters

Procurement Notes

Verify the specific ordering code against the manufacturer's official datasheet to ensure correct package type and environmental compliance grade. Confirm that the required short-circuit withstand time aligns with the application's fault protection requirements. Check for updated revision history to ensure compatibility with design specifications.

Selection Notes

Select this component when high power density and efficient switching are required in inverter applications. Consider the thermal resistance values for heatsink design. Evaluate the gate charge characteristics against the driver capabilities to optimize switching speed and minimize losses.

Part Context

This part belongs to the STMicroelectronics M series of IGBTs, designed for optimal balance between inverter system performance and efficiency. It shares core electrical characteristics with other members of the series but differs in packaging and current ratings.

Replacement Considerations

STGW30M65DF2: Through-hole TO-247-3 package equivalent. STGP30M65DF2: Through-hole TO-220 package equivalent. Verify pinout and thermal management requirements when substituting.