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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 60A TO-263
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 30A
- Power - Max：260 W
- Switching Energy：383µJ (on), 233µJ (off)
- Input Type：Standard
- Gate Charge：163 nC
- Td (on/off) @ 25°C：45ns/189ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The STGB30V60F is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the V series, manufactured by STMicroelectronics. It utilizes a trench gate field-stop structure and is housed in a D2PAK-3 surface-mount package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 60 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V, a gate-emitter leakage current of 250 nA, and a power dissipation rating of 260 W. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- Trench gate field-stop technology for optimized switching performance
- Positive VCE(sat) temperature coefficient enabling safe paralleling
- Very fast soft recovery antiparallel diode integration
Applications
- High-frequency DC-DC converters
- Motor drive inverters
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure the component matches the required D2PAK-3 footprint and lead configuration for the target PCB design. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Selection Notes
Select this component when a surface-mount IGBT with high current handling is required. The 600 V rating suits medium-voltage applications. Consider the 1.85 V saturation voltage for conduction loss calculations. Verify that the D2PAK-3 package thermal resistance meets the system's heat dissipation needs without excessive heatsinking.
Part Context
This part belongs to the STMicroelectronics V series of IGBTs. The series is characterized by an advanced proprietary trench gate field-stop structure designed to balance conduction and switching losses. This architecture aims to maximize efficiency in very high-frequency converter applications compared to older planar technologies.
Replacement Considerations
STGB30V60DF is a verified through-hole alternative in the same series. Both share similar electrical ratings but differ in package type (D2PAK vs TO-220). Verify pin compatibility and thermal management requirements when substituting between these form factors.
