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Product Detailed Parameters
- Description：IGBT 600V 7.5A D2PAK
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：7.5 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：2.95V @ 15V, 1.5A
- Power - Max：38 W
- Switching Energy：19µJ (on), 12µJ (off)
- Input Type：Standard
- Gate Charge：12 nC
- Td (on/off) @ 25°C：11ns/60ns
- Test Condition：400V, 1.5A, 100Ohm, 15V
- Reverse Recovery Time (trr)：85 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The STGB3HF60HD is a 600 V, 3 A very fast IGBT with an integrated ultrafast diode. It utilizes advanced planar technology to deliver stable switching performance across temperature variations and reduced conduction losses. The device features minimal tail current for efficient turn-off and incorporates an ultrafast soft recovery antiparallel diode to minimize reverse recovery effects.
Feature Summary
- Advanced planar technology ensures stable switching performance versus temperature
- Minimal tail current reduces switching energy losses
- Ultrafast soft recovery antiparallel diode minimizes reverse recovery charge
Applications
- High-frequency power converters
- Motor drive inverters
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific ordering code against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure the component status is active before procurement planning. Cross-reference thermal resistance values with the intended heatsinking solution to maintain junction temperatures within safe operating limits during operation.
Selection Notes
Select this component for applications requiring high switching frequencies where low conduction loss is critical. The integrated ultrafast diode simplifies circuit design by eliminating the need for external freewheeling diodes in half-bridge configurations. Evaluate thermal management requirements based on the specific ambient temperature and airflow conditions of the final assembly.
Part Context
This part belongs to STMicroelectronics' PowerMESH™ IGBT family, optimized for high-frequency applications. It complements other devices in the series such as the STGP3HF60HD and STGD3HF60HD, offering similar technological benefits tailored to different current ratings for versatile power electronics design.
Replacement Considerations
Direct substitutes include STGP3HF60HD and STGD3HF60HD from the same manufacturer. Verify pin compatibility and thermal characteristics when replacing with these variants. Ensure the alternative device meets the specific voltage and current requirements of the original design.
