STGB3NB60FDT4

Overview

The STGB3NB60FDT4 is a PowerMESH™ N-channel IGBT from STMicroelectronics, rated for 600V collector-emitter voltage and 3A continuous current at 125°C. It utilizes a patented strip layout to achieve low on-state voltage drop (<2.4V) and low gate charge (16nC typ). Designed for high-frequency operation below 40kHz, it features short-circuit capability and an integrated fast recovery anti-parallel diode in the D2PAK package.

Feature Summary

• PowerMESH™ technology with patented strip layout for optimized performance
• Optimized for high-frequency applications operating below 40kHz
• Integrated ultra-fast recovery antiparallel diode
• Short-circuit rated for robust industrial protection

Applications

• Motor controls
• SMPS and PFC in hard switching topologies
• Resonant converter topologies

Procurement Notes

Verify component authenticity through authorized channels as this part is marked obsolete. Confirm that the D2PAK tape and reel packaging matches specific manufacturing lot requirements. Ensure design compatibility with legacy thermal profiles since replacement components may differ in junction-to-case resistance characteristics.

Selection Notes

Select this component for designs requiring low switching losses in resonant or hard-switching converters under 40kHz. The D2PAK package suits surface-mount applications needing moderate current handling. Verify that the 600V rating aligns with system bus voltages and that the 3A limit accommodates peak load currents without exceeding safe operating area boundaries.

Part Context

This device belongs to the STGP/STGD/STGF/STGB3NB60F family of PowerMESH™ IGBTs. Variants include TO-220, TO-220FP, DPAK, and D2PAK packages. The 'D' suffix denotes versions with an integrated anti-parallel diode, while 'T4' indicates tape and reel packaging. All variants share identical electrical characteristics.

Replacement Considerations

Public confirmed substitutes: STGP3NB60FD, STGD3NB60FT4, STGF3NB60FD.