STGB3NC120HDT4

STGB3NC120HDT4

$2.08
  • Description:IGBT 1200V 14A TO-263
  • Series:PowerMESH™

SKU:0cc6c4d357e4 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 1200V 14A TO-263
  • Series:PowerMESH™
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):14 A
  • Current - Collector Pulsed (Icm):20 A
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 3A
  • Power - Max:75 W
  • Switching Energy:236µJ (on), 290µJ (off)
  • Input Type:Standard
  • Gate Charge:24 nC
  • Td (on/off) @ 25°C:15ns/118ns
  • Test Condition:800V, 3A, 10Ohm, 15V
  • Reverse Recovery Time (trr):51 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263 (D2PAK)
  • Grade:-
  • Qualification:-

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STGB3NC120HDT4

Overview

The STGB3NC120HDT4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes PowerMESH Ultrafast technology and is housed in a D2PAK surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 14 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.3 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 75 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • PowerMESH Ultrafast technology for optimized switching performance
  • High input impedance suitable for voltage-driven applications
  • Soft recovery characteristics for reduced electromagnetic interference

Applications

  • Industrial motor control systems
  • High-frequency power supplies
  • Inverter circuits requiring soft switching

Procurement Notes

Verify the specific ordering suffix against official STMicroelectronics documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and manufacturing origin through the manufacturer's official product change notices or datasheet revision history before finalizing procurement orders.

Selection Notes

Select this component when a high-voltage IGBT with low saturation voltage and fast switching capabilities is required in a surface-mount D2PAK package. Ensure the application design accounts for the 75 W power dissipation limit and the 1.2 kV voltage rating to maintain safe operating area margins under expected thermal conditions.

Part Context

This part belongs to the STGB3NC120HD series, which represents an advanced family of IGBTs designed using patented strip layout technology. The 'H' suffix indicates optimization for high-frequency applications, balancing low on-state voltage drop with reduced fall time for improved efficiency in power conversion systems.

Replacement Considerations

Direct substitutes may include other STMicroelectronics IGBTs from the same PowerMESH HD family with compatible pinouts and electrical ratings, such as variants with different current capacities but identical voltage and package specifications.

STGB3NC120HDT4STGB3NC120HDT4
$2.08
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