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The STGB3NC120HDT4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes PowerMESH Ultrafast technology and is housed in a D2PAK surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 14 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.3 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 75 W. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official STMicroelectronics documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and manufacturing origin through the manufacturer's official product change notices or datasheet revision history before finalizing procurement orders.
Select this component when a high-voltage IGBT with low saturation voltage and fast switching capabilities is required in a surface-mount D2PAK package. Ensure the application design accounts for the 75 W power dissipation limit and the 1.2 kV voltage rating to maintain safe operating area margins under expected thermal conditions.
This part belongs to the STGB3NC120HD series, which represents an advanced family of IGBTs designed using patented strip layout technology. The 'H' suffix indicates optimization for high-frequency applications, balancing low on-state voltage drop with reduced fall time for improved efficiency in power conversion systems.
Direct substitutes may include other STMicroelectronics IGBTs from the same PowerMESH HD family with compatible pinouts and electrical ratings, such as variants with different current capacities but identical voltage and package specifications.