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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-263
- Series：HB
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：283 W
- Switching Energy：498µJ (on), 363µJ (off)
- Input Type：Standard
- Gate Charge：210 nC
- Td (on/off) @ 25°C：40ns/142ns
- Test Condition：400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The STGB40H65FB is a trench gate field-stop IGBT from the HB series, rated at 650 V collector-emitter voltage and 40 A continuous collector current. It features a typical saturation voltage of 1.6 V at 40 A and supports a maximum junction temperature of 175 °C. The device utilizes an advanced proprietary structure to balance conduction and switching losses, minimizing tail current for high-speed operation.
Feature Summary
- Advanced trench gate field-stop structure optimizes efficiency in frequency converters by balancing conduction and switching losses.
- Slightly positive VCE(sat) temperature coefficient ensures safer parallel operation with tight parameter distribution.
- High-speed switching design minimizes tail current for improved dynamic performance.
Applications
- Frequency converters
- Industrial motor drives
- Power supplies
Procurement Notes
Verify component authenticity through authorized channels due to potential counterfeits. Confirm package integrity and marking consistency against official datasheets. Check for recent product change notices affecting specifications or availability. Ensure storage conditions meet moisture sensitivity level requirements before soldering.
Selection Notes
Select this component for applications requiring high efficiency and safe paralleling capabilities. The HB series offers a compromise between conduction and switching losses suitable for medium-frequency operations. Consider the 175 °C max junction temperature for thermal management designs requiring higher operating margins compared to standard 150 °C devices.
Part Context
Part of the STMicroelectronics HB series IGBTs, designed for high-efficiency power conversion. The trench gate field-stop technology distinguishes it from older planar structures, offering lower switching losses and better thermal stability for industrial and automotive-grade power electronics applications.
Replacement Considerations
- STGWA40H65DFB
FAQ
What is the typical saturation voltage (VCE(sat)) for the STGB40H65FB?
The typical saturation voltage is 1.6 V at a collector current of 40 A.
Does the STGB40H65FB support parallel operation?
Yes, its slightly positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
What is the maximum junction temperature for this device?
The maximum junction temperature (TJ) is 175 °C.
