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Product Detailed Parameters
- Description：IGBT 600V 15A 56W I2PAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：15 A
- Current - Collector Pulsed (Icm)：21 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 3A
- Power - Max：56 W
- Switching Energy：20µJ (on), 68µJ (off)
- Input Type：Standard
- Gate Charge：13.6 nC
- Td (on/off) @ 25°C：12ns/76ns
- Test Condition：390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：21 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package：I2PAK
- Grade：-
- Qualification：-
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Overview
The STGB6NC60HD-1 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH™ family, manufactured by STMicroelectronics. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 15 A at 25°C. The device utilizes a patented strip layout to optimize high-frequency performance, offering reduced fall time while maintaining low on-state voltage drop. Packaged in a TO-220AB through-hole housing with three terminals, it includes an integrated antiparallel diode. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a saturation voltage of 1.9 V, and a power dissipation rating of 56 W.
Feature Summary
- PowerMESH™ technology for optimized switching performance
- Integrated ultra-fast recovery antiparallel diode
- Low CRES/CIES ratio to prevent cross-conduction
Applications
- High frequency inverters
- SMPS and PFC in hard switch topologies
- Motor drivers
Procurement Notes
Verify the specific suffix '-1' against official datasheets to confirm pinout or packaging variations. Ensure RoHS compliance status matches project requirements. Confirm thermal management capabilities align with the 56 W dissipation rating in the target application environment.
Selection Notes
Select this component for applications requiring high-frequency operation with low switching losses. The low CRES/CIES ratio makes it suitable for resonant topologies where cross-conduction susceptibility must be minimized. Compare the 15 A current rating against peak load requirements to ensure adequate margin.
Part Context
This part belongs to the STGP/STGF/STGB series of PowerMESH™ IGBTs. The 'H' suffix indicates optimization for high-frequency applications with reduced fall time. The 'B' typically denotes a specific package variant within the TO-220 family, often associated with higher current ratings compared to lower-numbered counterparts in the same voltage class.
Replacement Considerations
Direct substitutes may include STGP6NC60HD or STGF6NC60HD, provided the package and pinout compatibility is verified. Check datasheets for matching VCEO, IC, and VCE(sat) specifications to ensure functional equivalence in the circuit design.
