SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STGB6NC60HDT4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes PowerMESH™ technology to achieve low on-state voltage drop and high switching performance. The device features a collector-emitter maximum voltage of 600 V and a continuous collector current of 15 A at 25°C. Key electrical parameters include a saturation voltage of 1.9 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 63 W. It operates within a temperature range of -55°C to +150°C and is housed in a DPAK-3 (TO-252-3) surface-mount package.
Verify the specific ordering suffix against official STMicroelectronics documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors prior to procurement. Ensure storage conditions adhere to moisture sensitivity level requirements for the TO-252-3 package.
Select this component for designs requiring a balance of low conduction loss and fast switching characteristics. The 600V rating suits medium-voltage AC/DC conversion systems. Verify that the thermal management solution can handle the 63W power dissipation in the DPAK-3 package under expected operating loads.
This part belongs to the STGxNC60HD series of very fast IGBTs from STMicroelectronics. The series is characterized by advanced trench gate technology aimed at improving efficiency in high-frequency power conversion applications compared to standard hard-switching devices.
Direct pin-compatible substitutes within the same family include STGD6NC60HDT4, which shares similar electrical characteristics but may differ slightly in switching energy values. Cross-family replacements require careful verification of Vce(sat), Ic ratings, and package dimensions.