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The STGB7NB40LZT4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes Silicon technology and is housed in a D2PAK-3 surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 14 A, with a specific continuous current rating of 6 A at 25°C. Key electrical parameters include a saturation voltage of 1.5 V, a power dissipation of 70 W, and a gate-emitter voltage range of -12 V to 16 V. It operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm the part number suffix matches the reel packaging specification. Check for RoHS compliance status as indicated in official documentation. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet to prevent package damage prior to soldering.
Select this component when a 600 V rated IGBT with high short-circuit immunity is required. The integrated gate resistor simplifies circuit design by removing external gate drive components. Consider the D2PAK-3 package for surface-mount assembly constraints. Evaluate thermal management requirements based on the 70 W power dissipation rating and operating temperature limits.
This part belongs to the STGB7NB40LZ series, which is optimized for automotive ignition systems. The series leverages PowerMESH technology to achieve low on-state voltage and high short-circuit withstand capability. It is specifically engineered for coil driving in harsh automotive environments, offering ESD protection and high pulsed current handling.
STGB20NB41LZT4 is listed as a similar replacement option.