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Product Detailed Parameters
- Description：IGBT 600V 15A 65W D2PAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：15 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.75V @ 15V, 3A
- Power - Max：65 W
- Switching Energy：55µJ (on), 85µJ (off)
- Input Type：Standard
- Gate Charge：19 nC
- Td (on/off) @ 25°C：17ns/72ns
- Test Condition：390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：23.5 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The STGB8NC60KDT4 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 10 A at 25°C, with a pulsed collector current capability of 30 A. The device operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 65 W. Packaged in a surface-mount D2PAK (TO-263) housing, it exhibits a maximum collector-emitter saturation voltage of 2.5 V at 15 V gate drive and 5 A collector current. Key switching parameters include a turn-on delay time of 17 ns and a turn-off delay time of 72 ns under standard test conditions.
Feature Summary
- Developed using advanced PowerMESH technology for optimized trade-off between switching performance and low on-state behavior.
- Features a very soft ultra-fast recovery antiparallel diode to minimize reverse recovery losses.
- Provides short-circuit withstand capability of 10 μs for enhanced system robustness.
- Lower C_res / C_ies ratio reduces susceptibility to cross-conduction in bridge configurations.
Applications
- Resonant or soft-switching applications
- High frequency inverters
- Motor drives
Procurement Notes
Verify the specific suffix 'T4' against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS3 compliance requirements if mandated by the design. Cross-reference the absolute maximum ratings with the target application's thermal management capabilities to prevent junction temperature exceedance during operation.
Selection Notes
Select this component for designs requiring high-frequency operation with low conduction losses. The 600 V rating suits medium-voltage AC/DC conversion systems. Verify that the gate drive circuit can supply sufficient current to charge the input capacitance rapidly, given the 19 nC gate charge specification. Ensure the PCB layout supports the D2PAK thermal pad for adequate heat dissipation at the specified 65 W power dissipation limit.
Part Context
This IGBT belongs to the STGxNC60KD series, which utilizes PowerMESH technology. The 'B' designation typically indicates a specific current rating variant within the 600 V family. It is part of STMicroelectronics' portfolio of fast IGBTs designed for efficient power switching in industrial and consumer electronics applications.
Replacement Considerations
Direct substitutes within the same series include STGB10NC60KDT4 and STGB14NC60KDT4, offering higher current ratings. For pin-compatible alternatives with similar electrical characteristics, consider other manufacturers' 600 V D2PAK IGBTs, ensuring V_ce(sat) and switching times are comparable.
