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Product Detailed Parameters
- Description：IGBT 600V 10A DPAK
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：18 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.75V @ 15V, 5A
- Power - Max：62.5 W
- Switching Energy：45µJ (on), 105µJ (off)
- Input Type：Standard
- Gate Charge：23 nC
- Td (on/off) @ 25°C：9.5ns/87ns
- Test Condition：400V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The STGD10HF60KD is an automotive-grade Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast recovery anti-parallel diode. It utilizes the PowerMESH™ process for the IGBT and Turbo 2 technology for the diode, offering a balance between conduction losses and switching behavior. The device is rated for 600 V collector-emitter voltage and 10 A continuous collector current. It features short-circuit ruggedness and is designed for high-frequency operation in diverse high-voltage applications.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Low on-state voltage drop for improved efficiency
- Reduced C_res / C_ies ratio to prevent cross-conduction susceptibility
- Very soft ultrafast recovery anti-parallel diode
Applications
- Automotive power electronics systems
- High voltage converters operating at high frequencies
- Resonant or soft-switching applications
Procurement Notes
Verify the specific ordering suffix and package variant when sourcing, as manufacturers may update component revisions without changing the base part number. Confirm that the received units match the AEC-Q101 qualification requirements for your target application. Check for any recent lifecycle status changes, such as obsolescence notices, before finalizing procurement plans.
Selection Notes
Select this component when designing circuits requiring automotive-grade reliability combined with high switching frequency capabilities. The low C_res / C_ies ratio makes it suitable for topologies sensitive to Miller effect-induced turn-on. Ensure the thermal management design accommodates the specific power dissipation characteristics of the PowerMESH™ process under expected load conditions.
Part Context
This device belongs to STMicroelectronics' portfolio of advanced IGBTs utilizing proprietary trench gate technologies. It is distinct from non-automotive variants by its rigorous qualification standards. The integration of the Turbo 2 diode technology differentiates it from standard IGBT modules, providing optimized reverse recovery performance for hard-switching applications.
Replacement Considerations
Direct replacements must match the 600 V / 10 A rating and DPAK/TO-252 package form factor. Verify that alternative components also meet AEC-Q101 standards if automotive use is required. Compare switching loss specifications and short-circuit withstand times to ensure circuit stability is maintained during substitution.
