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Product Detailed Parameters
- Description：IGBT 600V 20A 60W DPAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 5A
- Power - Max：60 W
- Switching Energy：31.8µJ (on), 95µJ (off)
- Input Type：Standard
- Gate Charge：19.2 nC
- Td (on/off) @ 25°C：14.2ns/72ns
- Test Condition：390V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
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Overview
The STGD10NC60HT4 is an N-channel IGBT developed using advanced PowerMESH technology, offering a balance of switching performance and low on-state behavior. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 10 A. The device operates within a junction temperature range of -55°C to +150°C and supports high-frequency operation up to 70 kHz. Key electrical characteristics include a low on-voltage drop (VCE(sat)) and a low CRES/CIES ratio to prevent cross-conduction susceptibility.
Feature Summary
- Advanced PowerMESH technology ensures excellent trade-off between switching performance and low on-state behavior
- Low CRES/CIES ratio eliminates cross-conduction susceptibility
- Very soft ultra-fast recovery antiparallel diode for efficient commutation
Applications
- Resonant converter applications
- Soft-switching power supplies
- High-frequency inverter circuits
Procurement Notes
Verify the specific suffix HT4 against official STMicroelectronics documentation to confirm package type and tape-and-reel specifications. Confirm end-of-life status or obsolescence notices prior to design-in, as availability may be restricted. Ensure the supplier provides valid traceability documents matching the manufacturer's part identification.
Selection Notes
Select this component when designing resonant or soft-switching topologies requiring fast switching speeds. The low CRES/CIES ratio makes it suitable for half-bridge configurations where shoot-through prevention is critical. Verify thermal management requirements align with the 150°C maximum junction temperature limit.
Part Context
This device belongs to the STGDxNC60H series of very fast IGBTs from STMicroelectronics. It shares the PowerMESH process family with other variants like STGD7NC60HT4 but is rated for 10 A continuous current. The 'H' designation typically indicates optimized high-speed characteristics compared to standard K-series devices.
Replacement Considerations
Direct substitutes include STGD7NC60HT4 for lower current applications or STGP10NC60HD for similar ruggedness. Verify pinout compatibility and thermal resistance values before swapping. Check if the alternative offers equivalent short-circuit withstand times if protection is required.
