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Product Detailed Parameters
- Description：IGBT 600V 20A DPAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 5A
- Power - Max：62 W
- Switching Energy：55µJ (on), 85µJ (off)
- Input Type：Standard
- Gate Charge：19 nC
- Td (on/off) @ 25°C：17ns/72ns
- Test Condition：390V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：22 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
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Overview
The STGD10NC60KDT4 is a 600 V, 10 A N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes advanced PowerMESH technology to achieve low on-state voltage drop and fast switching performance. The device features a short-circuit withstand time of 10 μs and includes an integrated ultra-fast recovery antiparallel diode. It is housed in a DPAK (TO-252) surface-mount package with three pins. Operating temperatures range from -55 °C to +150 °C junction temperature.
Feature Summary
- Advanced PowerMESH technology for optimized trade-off between switching speed and conduction losses
- Integrated very soft ultra-fast recovery antiparallel diode
- Short-circuit ruggedness with 10 μs withstand capability
- Low C_res / C_ies ratio to prevent cross-conduction susceptibility
Applications
- Resonant or soft-switching applications
- High frequency inverters
- SMPS and PFC in hard switch and resonant topologies
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required package variant. Check current lifecycle status as availability may vary. Ensure storage conditions comply with moisture sensitivity level requirements before soldering.
Selection Notes
Select this IGBT for designs requiring high-frequency operation with minimal cross-conduction risk. The DPAK package suits space-constrained surface-mount layouts. Verify thermal management capabilities against the specified power dissipation limits at target operating temperatures.
Part Context
This component belongs to the STGx10NC60KD series of fast IGBTs. It shares core technological features with other variants like STGB10NC60KDT4 but differs in packaging configuration. The series emphasizes efficiency in resonant converter architectures.
Replacement Considerations
Direct substitutes include STGB10NC60KDT4 (D2PAK package) or STGP10NC60HD (TO-220 package). Verify pinout compatibility and thermal resistance differences when transitioning between packages.
