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Product Detailed Parameters
- Description：IGBT 420V 25A 125W DPAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：420 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 4.5V, 10A
- Power - Max：125 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：29 nC
- Td (on/off) @ 25°C：650ns/13.5µs
- Test Condition：300V, 10A, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The STGD18N40LZT4 is an automotive-grade single IGBT from the PowerMESH™ series, manufactured by STMicroelectronics. It features a maximum collector-emitter voltage of 420 V and a continuous collector current of 25 A at 25°C. The device supports a pulsed collector current of 40 A and dissipates up to 125 W of power. Key electrical parameters include a gate charge of 29 nC and a saturation voltage of 1.7 V @ 4.5V, 10A. Switching times are 650ns (turn-on) and 13.5µs (turn-off) under test conditions of 300V, 10A, 5V. It operates within a junction temperature range of -55°C to 175°C and is housed in a DPAK (TO-252-3) surface-mount package.
Feature Summary
- AEC-Q101 qualified for automotive ignition system applications
- Integrated gate-collector high voltage clamping and ESD protection
- Logic level gate drive with built-in gate resistors
Applications
- Automotive ignition systems
- Coil driving in harsh automotive environments
Procurement Notes
Verify the specific ordering suffix T4 corresponds to the reel packaging configuration when sourcing. Confirm that the component meets the required AEC-Q101 qualification standards for your specific automotive application. Ensure thermal management designs account for the 125 W power dissipation limit in the DPAK package. Cross-reference the datasheet revision history for any recent changes to pinout or electrical characteristics before finalizing procurement.
Selection Notes
Select this component for applications requiring robust short-circuit withstand capability and low on-state voltage. The integrated Zener diodes simplify circuit design by eliminating external overvoltage protection components. Consider the logic level gate drive requirement for compatibility with standard microcontroller outputs. Evaluate the thermal performance in the DPAK package against the expected operating temperature range of -55°C to 175°C.
Part Context
This part belongs to the STGx18N40LZ family of automotive-grade IGBTs. It utilizes advanced PowerMESH technology optimized for coil driving. The device is designed to handle high energy capabilities, specifically an ESCIS energy of 180 mJ at TC=150°C with L=3mH, as documented for similar models in the series.
Replacement Considerations
STGB18N40LZT4 is a verified substitute within the same automotive-grade series. STGD19N40LZ and STGD20N40LZ are related models but may have different electrical ratings or status; verify compatibility carefully.
