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Product Detailed Parameters
- Description：IGBT 435V 25A TO-252
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：435 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：1.25V @ 4V, 6A
- Power - Max：125 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：26 nC
- Td (on/off) @ 25°C：1.1µs/4.6µs
- Test Condition：300V, 10A, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The STGD25N40LZAG is an application-specific Insulated Gate Bipolar Transistor (IGBT) utilizing PowerMESH technology, optimized for coil driving in automotive ignition systems. It features AEC-Q101 qualification and a short-circuit withstand capability of 320 mJ at TJ= 25 °C. The device includes ESD-protected logic level gate input and an integrated gate resistor, eliminating the need for external protection circuitry. Key electrical characteristics include a collector-emitter voltage of 400 V, continuous collector current of 25 A at 25 °C, and power dissipation of 62 W.
Feature Summary
- Advanced PowerMESH technology optimized for harsh automotive environments
- Integrated gate resistor and ESD-protected logic level gate input
- High short-circuit withstand energy capability over wide temperature range
- Very low on-state saturation voltage
Applications
- Automotive ignition system coil driving
- Harsh environment automotive electronic control units
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches required PCB footprint. Ensure AEC-Q101 qualification status aligns with automotive reliability standards. Validate lot traceability through authorized distribution channels to prevent counterfeit infiltration.
Selection Notes
Select this IGBT when designing automotive ignition coils requiring high short-circuit robustness and low conduction losses. The integrated gate resistor simplifies driver design by removing external components. Logic level compatibility allows direct interfacing with standard microcontrollers without additional level shifting circuits.
Part Context
This part belongs to STMicroelectronics' automotive-grade IGBT portfolio designed for high-reliability applications. It represents a specialized solution within the broader discrete transistor category, focusing specifically on the demanding requirements of ignition systems rather than general-purpose switching.
Replacement Considerations
Direct substitutes must match the 400V rating, 25A current capacity, and TO-220FP-3 package. Verify equivalent short-circuit energy ratings and AEC-Q101 qualification before substitution.
