STGD3NB60HDT4

$0.51

Description：IGBT 600V 10A 50W DPAK
Series：PowerMESH™

SKU:f56549bde323 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 10A 50W DPAK
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：24 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 3A
Power - Max：50 W
Switching Energy：33µJ (off)
Input Type：Standard
Gate Charge：21 nC
Td (on/off) @ 25°C：5ns/53ns
Test Condition：480V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr)：95 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：DPAK
Grade：-
Qualification：-

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STGD3NB60HDT4

Overview

The STGD3NB60HDT4 is an N-channel PowerMESH™ IGBT from STMicroelectronics, packaged in a DPAK (TO-252-3) surface-mount housing. It features a collector-emitter voltage rating of 600 V and a continuous collector current of 6 A at 100°C. The device integrates a TurboSwitch™ antiparallel diode with a forward current of 1.5 A. Key electrical parameters include a maximum saturation voltage of 2.8 V at 15 V gate drive and 3 A collector current. Total switching losses are specified at 100 µJ under standard test conditions.

Feature Summary

Advanced PowerMESH™ technology providing optimized trade-off between low on-state voltage drop and high-frequency switching performance.
Integrated TurboSwitch™ antiparallel diode designed for very soft ultra-fast recovery characteristics to minimize cross-conduction susceptibility.
Low gate charge and high input impedance suitable for high-frequency operation up to 50 kHz.

Applications

High frequency motor controls
SMPS and PFC in both hard switching and resonant topologies

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm the specific ordering suffix matches the required tape and reel packaging format. Ensure compliance with RoHS3 standards and check for any relevant environmental export classifications prior to final procurement decisions.

Selection Notes

Select this component for designs requiring compact surface-mount solutions with integrated freewheeling diodes. Evaluate thermal resistance limits against expected power dissipation profiles. Consider the specific switching loss values when designing gate drive circuits for optimal efficiency at target operating frequencies.

Part Context

This part belongs to the STGD3NB60HD family of PowerMESH™ IGBTs. The 'T4' suffix specifically denotes the tape and reel packaging configuration intended for automated assembly processes. This distinguishes it from tube-packaged variants within the same electrical specification family.

Replacement Considerations

STGD3NB60HDT4 is marked as obsolete. Verify availability of direct replacements or evaluate alternative IGBTs with matching 600V ratings and DPAK footprints.

FAQ

What is the typical short circuit withstand time for this device?

The datasheet specifies a typical short circuit withstand time of 5 microseconds for the S-family and 4 microseconds for the H-family.

How does the TurboSwitch™ diode affect switching performance?

The co-packaged TurboSwitch™ antiparallel diode offers very soft ultra-fast recovery, which helps reduce cross-conduction susceptibility and improves overall switching behavior.