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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 10A DPAK
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：20 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 5A
- Power - Max：83 W
- Switching Energy：56µJ (on), 78.5µJ (off)
- Input Type：Standard
- Gate Charge：43 nC
- Td (on/off) @ 25°C：30ns/140ns
- Test Condition：400V, 5A, 47Ohm, 15V
- Reverse Recovery Time (trr)：134.5 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
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Overview
The STGD5H60DF is a single-channel Insulated Gate Bipolar Transistor (IGBT) from the H series, manufactured by STMicroelectronics. It utilizes an advanced trench gate field-stop structure to optimize the balance between conduction and switching losses for high-frequency converters. The device features a collector-emitter maximum voltage of 600 V and a continuous collector current of 5 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.95 V and a power dissipation rating of 83 W. It operates within a temperature range of -55°C to +175°C and is housed in a TO-252-3 (DPAK-3) package.
Feature Summary
- Advanced trench gate field-stop structure for optimized efficiency
- Slightly positive VCE(sat) temperature coefficient for safe paralleling
- Ultrafast soft recovery antiparallel diode integration
- Short-circuit rated capability
Applications
- High switching frequency converters
- Uninterruptible power supplies (UPS)
- Welding machines
- Photovoltaic inverters
- Power factor correction circuits
Procurement Notes
Verify the specific ordering suffix to confirm the exact package variant and tape/reel configuration, as the base part number may correspond to multiple packaging options. Confirm RoHS compliance status through official documentation before procurement. Ensure the supplier provides valid traceability data consistent with STMicroelectronics manufacturing standards.
Selection Notes
Select this component when designing systems requiring a 600V IGBT with low switching losses and integrated fast recovery diodes. The tight parameter distribution supports parallel operation for higher current applications. Evaluate thermal management requirements based on the 83 W power dissipation limit in the DPAK-3 package.
Part Context
This device belongs to the STMicroelectronics H series of trench gate field-stop IGBTs. The series is engineered to maximize converter efficiency by balancing conduction and switching losses. Other members in this family include variants with different current ratings such as STGP5H60DF and STGB5H60DF, sharing similar structural technologies.
Replacement Considerations
Direct substitutes within the same H series include STGP5H60DF and STGB5H60DF. Verify pinout compatibility and thermal resistance characteristics when replacing components in existing designs.
