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Product Detailed Parameters
- Description：IGBT 1200V 10A TO-251
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：10:00 AM
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 5A
- Power - Max：75 W
- Switching Energy：2.59mJ (on), 9mJ (off)
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：690ns/12.1µs
- Test Condition：960V, 5A, 1kOhm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package：TO-251 (IPAK)
- Grade：-
- Qualification：-
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Overview
The STGD5NB120SZ-1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 10 A at 25°C. The device utilizes the PowerMESH™ technology to balance low on-state voltage drop with switching performance. Key electrical parameters include a maximum saturation voltage of 2 V at 15 V gate drive and 5 A collector current, and a power dissipation rating of 75 W. Switching energies are specified as 2.59 mJ for turn-on and 9 mJ for turn-off under test conditions of 960 V, 5 A, 1 kΩ, and 15 V.
Feature Summary
- Utilizes advanced PowerMESH™ process technology for optimized trade-off between low on-state behavior and switching performance.
Applications
- High-voltage power conversion circuits
- Industrial motor drives
- Uninterruptible power supplies
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS3 compliance status and check for specific manufacturing date codes relevant to production requirements. Review official datasheets for any recent product change notices or assembly site updates prior to integration into final designs.
Selection Notes
Select this component for applications requiring 1200 V blocking capability in a surface-mount DPAK package. Ensure thermal management solutions accommodate the 75 W power dissipation limit. Verify that the required gate drive voltage aligns with the standard input type specifications for optimal saturation voltage performance.
Part Context
This IGBT belongs to the STGD5 series from STMicroelectronics. It is designed for general-purpose high-voltage switching applications. The device is available in a TO-252-3 (DPAK) package, suitable for surface mount assembly. It operates within a junction temperature range of -55°C to 150°C.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult manufacturer documentation for potential cross-references or updated series replacements if this specific variant is discontinued.
