STGD7NB120S-1

$0.51

Description：IGBT 1200V 10A TO-251
Series：PowerMESH™

SKU:681ea3b3e5a6 Category: Single IGBTs Brand: STMicroelectronics

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT 1200V 10A TO-251
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：20 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 7A
Power - Max：55 W
Switching Energy：15mJ (off)
Input Type：Standard
Gate Charge：29 nC
Td (on/off) @ 25°C：570ns/-
Test Condition：960V, 7A, 1kOhm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package：TO-251 (IPAK)
Grade：-
Qualification：-

Download product information

STGD7NB120S-1

Overview

The STGD7NB120S-1 is a single N-channel IGBT from STMicroelectronics, utilizing the Power MESH™ technology. It features a collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (IC) of 7 A at 25°C. The device has a maximum power dissipation (Pd) of 55 W and operates within a temperature range of -40°C to +150°C. It is housed in an IPAK package.

Feature Summary

Utilizes advanced Power MESH™ process for optimized switching performance and low on-state behavior.

Applications

Procurement Notes

Verify the exact part number against official STMicroelectronics documentation to ensure compatibility with your circuit design. Confirm that the IPAK package style meets your board layout requirements. Check the latest datasheet for any updates to electrical characteristics or thermal parameters before finalizing procurement specifications.

Selection Notes

Select this component for high-voltage applications requiring robust switching capabilities. The 1200 V rating suits industrial and power conversion systems. Consider the 7 A current limit and 55 W power dissipation when designing thermal management solutions. Ensure gate drive voltages remain within the specified ±20 V limits for reliable operation.

Part Context

This IGBT belongs to STMicroelectronics' Power MESH™ family, designed for efficient power control. The STGD series typically offers improved trade-offs between conduction losses and switching speeds compared to older technologies. It is suitable for medium-power applications where high voltage blocking capability is essential.