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Product Detailed Parameters
- Description：IGBT 600V 13A 50W DPAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：25 A
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 3A
- Power - Max：50 W
- Switching Energy：46.5µJ (on), 23.5µJ (off)
- Input Type：Standard
- Gate Charge：12 nC
- Td (on/off) @ 25°C：6.7ns/46ns
- Test Condition：390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：30 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
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Overview
The STGDL6NC60DT4 is an N-channel IGBT manufactured by STMicroelectronics, rated for a maximum collector-emitter voltage of 600 V and a continuous collector current of 15 A. It utilizes advanced PowerMESH technology to achieve low on-state voltage drop and high switching speed. The device is housed in a DPAK (TO-252) surface-mount package with three pins. It features a very soft ultra-fast recovery antiparallel diode and a low CRES/CIES ratio to prevent cross-conduction susceptibility. The component operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Advanced PowerMESH technology ensures excellent trade-off between switching performance and low on-state behavior
- Very soft ultra-fast recovery antiparallel diode minimizes reverse recovery losses
- Low CRES/CIES ratio eliminates cross-conduction susceptibility
- Designed for high-frequency operation in resonant or soft-switching applications
Applications
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drives
Procurement Notes
Verify the specific suffix DT4 against official STMicroelectronics documentation to confirm the exact tape-and-reel packaging configuration and pinout orientation. Ensure the ordering part number matches the required DPAK variant. Cross-reference the datasheet revision date to confirm compliance with current environmental standards and electrical specifications before finalizing procurement.
Selection Notes
Select this component for designs requiring fast switching speeds combined with low conduction losses in the 600 V range. The DPAK package is suitable for surface-mount assembly where space constraints exist. Consider the thermal resistance characteristics of the TO-252 package for heat dissipation requirements. Verify that the gate drive circuitry can support the switching characteristics defined in the electrical parameters table.
Part Context
This IGBT belongs to the STGxLNC60 series, which leverages PowerMESH technology for optimized performance. It serves as a high-speed alternative to standard IGBTs in power conversion circuits. The device integrates a fast recovery diode, simplifying circuit design for half-bridge configurations. It is part of STMicroelectronics' portfolio focused on efficient power management solutions.
Replacement Considerations
The STGD6NC60HD is documented as a compatible alternative switch for similar applications, such as on the STEVAL-IHM021V2 demonstration board. Verify pin compatibility and thermal performance when substituting.
