STGF10M65DF2

Overview

The STGF10M65DF2 is a single N-channel IGBT from the M series, utilizing an advanced trench gate field-stop structure. It features a collector-emitter voltage of 650 V and a continuous collector current of 20 A at 25 °C. The typical saturation voltage is 1.8 V. It operates within a junction temperature range of -55 °C to +175 °C. The device is housed in a TO-220FP-3 package with through-hole mounting.

Feature Summary

• Trench gate field-stop technology for low-loss performance
• Positive VCE(sat) temperature coefficient for safer paralleling
• Soft and very fast recovery antiparallel diode

Applications

• General purpose inverters
• Motor control systems
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific ordering code against official STMicroelectronics documentation to ensure correct package and electrical specifications. Confirm RoHS compliance status directly from the manufacturer's datasheet or authorized distributor channels before procurement.

Selection Notes

Select this component for applications requiring a balance between inverter system performance and efficiency. The tight parameter distribution supports safer paralleling operations. Ensure the thermal management design accommodates the specified maximum junction temperature of 175 °C.

Part Context

This part belongs to the STMicroelectronics M series IGBTs, designed for optimal balance between inverter system performance and efficiency. The series emphasizes low-loss characteristics and short-circuit functionality, making it suitable for demanding power conversion environments.

Replacement Considerations

Direct substitutes include other M series IGBTs with similar ratings, such as STGP10M65DF2 or STGB10M65DF2, though package differences exist. Verify pinout compatibility and thermal resistance values when considering alternative packages like D2PAK or TO-247.