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Product Detailed Parameters
- Description：IGBT 600V 9A TO-220FP
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：9:00 AM
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 5A
- Power - Max：24 W
- Switching Energy：31.8µJ (on), 95µJ (off)
- Input Type：Standard
- Gate Charge：19.2 nC
- Td (on/off) @ 25°C：14.2ns/72ns
- Test Condition：390V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：22 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FP
- Grade：-
- Qualification：-
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Overview
The STGF10NC60HD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 9 A at 25 °C. The device exhibits a collector-emitter saturation voltage (VCE(sat)) of 2.5 V and a maximum power dissipation (Pd) of 24 W. It operates within a temperature range of -55 °C to +150 °C, with a maximum gate-emitter voltage of ±20 V. The component utilizes a TO-220FP package for through-hole mounting.
Feature Summary
- Optimized for high-frequency applications with reduced fall time
- Low on-state voltage drop for improved efficiency
- Very soft ultra-fast recovery antiparallel diode
- Low CRES/CIES ratio to prevent cross-conduction susceptibility
Applications
- High frequency motor controls
- Switching mode power supplies (SMPS)
- Power factor correction (PFC) circuits
- Resonant converter topologies
Procurement Notes
Verify the specific suffix 'F' against the datasheet to confirm the TO-220FP flange-mount package variant. Ensure the ordering code matches the exact electrical ratings required for the target circuit design. Confirm RoHS compliance status directly from the manufacturer's documentation before finalizing procurement orders.
Selection Notes
Select this component when a balance between low conduction loss and fast switching speed is required in hard-switched or resonant topologies. The TO-220FP package facilitates efficient heat dissipation compared to standard TO-220AB variants. Verify that the 9 A continuous current rating meets the thermal management requirements of the specific application environment.
Part Context
This IGBT belongs to the PowerMESH™ family developed using advanced strip layout technology. The 'H' suffix indicates optimization for high-frequency performance, while the 'F' denotes the specific TO-220FP package form factor. This series provides an excellent trade-off between switching performance and low on-state behavior for industrial power electronics.
Replacement Considerations
Direct substitutes include other STMicroelectronics devices within the same PowerMESH™ family, such as the STGP10NC60HD or STGB10NC60KDT4, provided the package type and specific electrical parameters align with the original design constraints.
