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The STGF10NC60SD is a 600 V, 10 A N-channel IGBT utilizing the PowerMESH™ process. It features a TO-220FP package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 10 A at TC = 25°C. The device exhibits a typical saturation voltage of 1.45 V at IC = 5 A and VGE = 15 V. Total switching losses reach 400 µJ at VCC = 480 V and IC = 5 A. The integrated antiparallel diode has a forward voltage of 2 V at IF = 5 A. Thermal resistance from junction to case is 5 °C/W.
Verify the specific ordering code STGF10NC60SD against official manufacturer documentation to ensure correct package type and electrical specifications. Confirm that the component meets required environmental compliance standards such as ECOPACK grades before procurement. Cross-reference datasheet revision history to validate parameter consistency.
Select this component for designs requiring fast switching capabilities within hard-switching topologies. Ensure thermal management accommodates the specified junction-to-case thermal resistance. Verify gate drive requirements align with the ±20 V maximum rating and threshold characteristics for optimal conduction and switching efficiency.
This part belongs to the STG(D/F)10NC60SD family, which includes the DPAK variant STGD10NC60SDT4. Both devices share identical electrical ratings and characteristics but differ in packaging. The STGF10NC60SD utilizes the TO-220FP tube packaging format, distinguishing it from the tape-and-reel DPAK version.
STGD10NC60SDT4 serves as a pin-compatible alternative within the same family, offering identical electrical performance in a DPAK package.