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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 30A TO-220FP
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 15A
- Power - Max：30 W
- Switching Energy：136µJ (on), 207µJ (off)
- Input Type：Standard
- Gate Charge：81 nC
- Td (on/off) @ 25°C：24.5ns/118ns
- Test Condition：400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：103 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FP
- Grade：-
- Qualification：-
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Overview
The STGF15H60DF is an N-channel IGBT from the H series, utilizing a trench gate field-stop structure. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 30 A. The device operates within a junction temperature range of -55°C to 175°C, with a maximum power dissipation (Pd) of 30 W. Key electrical parameters include a maximum gate-emitter voltage (VGEO) of 20 V, a typical collector-emitter saturation voltage (VCE(sat)) of 2 V at rated current, and a switching speed capability of 1 MHz. It is housed in a TO-220 package for through-hole mounting.
Feature Summary
- Advanced proprietary trench gate field-stop structure for optimized efficiency
- Slightly positive VCE(sat) temperature coefficient enabling safer paralleling operation
- Ultrafast soft recovery antiparallel diode integrated with short-circuit rating
Applications
- High switching frequency converters
- Efficiency-maximized power conversion systems
Procurement Notes
Verify the specific ordering suffix DF against official STMicroelectronics documentation to confirm pinout and packaging details. Ensure compatibility with thermal management requirements given the 30 W dissipation limit in the TO-220 package. Cross-reference the part number with authorized distributors to avoid counterfeit components, as parameter distributions are critical for paralleling applications.
Selection Notes
Select this component when designing high-frequency converters requiring a balance between conduction and switching losses. The tight parameter distribution makes it suitable for parallel configurations where uniform current sharing is essential. Consider the 600 V blocking voltage and 30 A current rating against the specific load requirements and thermal constraints of the target application.
Part Context
This device belongs to the STMicroelectronics H series of IGBTs, which are engineered to provide an optimum compromise between conduction and switching losses. The series utilizes a trench gate field-stop technology to enhance performance in high-frequency applications compared to standard planar structures.
Replacement Considerations
Compatible substitutes within the same family include STGF10H60DF, STGF20H60DF, and STGF30H60DF, which share the same package and structural characteristics but differ in current ratings.
