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Product Detailed Parameters
- Description：IGBT 600V 17A TO-220FP
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：17 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 12A
- Power - Max：32 W
- Switching Energy：135µJ (on), 815µJ (off)
- Input Type：Standard
- Gate Charge：54.5 nC
- Td (on/off) @ 25°C：17.5ns/175ns
- Test Condition：480V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：31 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FP
- Grade：-
- Qualification：-
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Overview
The STGF17NC60SD is a fast N-channel IGBT with an integrated Ultrafast freewheeling diode, manufactured using PowerMESH™ technology. It features a collector-emitter voltage of 600 V and a continuous collector current of 17 A at 25°C. The device offers low on-state voltage drop (VCE(sat)) of 1.9 V max at 12 A and optimized performance for medium frequencies like 5 kHz hard switching. Packaged in TO-220FP, it includes thermal resistance values of 3.9 °C/W (junction-case) for the IGBT and 5.5 °C/W for the diode.
Feature Summary
- Very low on-voltage drop (VCE(sat))
- Minimum power losses at 5 kHz in hard switching
- Optimized performance for medium operating frequencies
- IGBT co-packaged with Ultrafast freewheeling diode
Applications
- Electronic light dimmer
Procurement Notes
Verify component status as the datasheet explicitly marks this part as Obsolete. Confirm availability through authorized distributors or secondary markets. Ensure the package matches the TO-220FP specification and check for ECOPACK® environmental compliance grades if required by specific project standards.
Selection Notes
Select this component for applications requiring fast switching characteristics combined with low conduction losses at medium frequencies. Consider the 600 V rating and 17 A current capability against load requirements. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values for both the IGBT and the integrated diode.
Part Context
This device belongs to STMicroelectronics' PowerMESH™ IGBT family, designed to balance low conduction loss with fast switching performance. It integrates an Ultrafast diode to minimize reverse recovery effects. The TO-220FP package provides robust mounting capabilities suitable for various power electronics assemblies.
Replacement Considerations
As the product is marked obsolete, verify compatibility with newer series such as the STGF19NC60HD or STGP19NC60SD. Check electrical parameters including VCES, IC, and switching times to ensure they meet the original design specifications without modification.
