STGF20H65DFB2

Overview

The STGF20H65DFB2 is a high-speed IGBT from the HB2 series, utilizing an advanced trench gate field-stop structure. It features a 650 V collector-emitter voltage and a 20 A continuous collector current at 25 °C case temperature. The device includes a co-packaged antiparallel diode with very fast soft recovery characteristics. Key electrical parameters include a typical VCE(sat) of 1.65 V at IC = 20 A and a maximum junction temperature of 175 °C. Thermal resistance from junction to case is 3.3 °C/W for the IGBT and 5.8 °C/W for the diode. Total power dissipation is rated at 45 W at TC = 25 °C.

Feature Summary

• Evolution of proprietary trench gate field-stop structure optimized for conduction and switching energy reduction.
• Co-packaged antiparallel diode featuring very fast and soft recovery behavior with minimized tail current.
• Positive VCE(sat) temperature coefficient enabling safer parallel operation.
• Tight parameter distribution and low thermal resistance.

Applications

• Welding
• Power factor correction
• UPS
• Solar inverters
• Chargers

Procurement Notes

Verify the specific datasheet revision (DS13342 Rev 1) against the manufacturer's official website before finalizing procurement. Confirm that the TO-220FP tube packaging aligns with assembly requirements. Ensure design margins account for the absolute maximum ratings, particularly the 650 V collector-emitter voltage and 175 °C junction temperature limits under varying thermal conditions.

Selection Notes

Select this component when designing circuits requiring high efficiency in fast-switching applications. The HB2 series offers improved VCE(sat) behavior at low currents compared to previous generations. Consider the positive temperature coefficient for paralleling multiple devices. Evaluate the thermal impedance curves to ensure adequate heat sinking for the specified power dissipation levels at target operating frequencies.

Part Context

This part belongs to the STMicroelectronics HB2 series of IGBTs. It shares the same core technology and electrical specifications as the STGB20H65DFB2, which utilizes a D2PAK package instead of the TO-220FP form factor. Both parts are designed for similar high-efficiency power conversion applications.

Replacement Considerations

STGB20H65DFB2 is a direct functional equivalent within the same series, differing only in the D2PAK package format. Verify pinout compatibility and thermal interface dimensions when substituting between TO-220FP and D2PAK packages.

FAQ

What is the insulation withstand voltage of the STGF20H65DFB2?

The device provides an insulation withstand voltage of 2.5 kV RMS from all three leads to the external heat sink for a duration of 1 second at TC = 25 °C.

How does the VCE(sat) behave with respect to temperature?

The STGF20H65DFB2 exhibits a positive VCE(sat) temperature coefficient, which facilitates safer parallel operation by preventing current hogging among multiple devices.

What are the switching energy values at TJ = 175 °C?

At TJ = 175 °C, the typical turn-on switching energy (Eon) is 556 µJ and the typical turn-off switching energy (Eoff) is 378 µJ, measured at VCC = 400 V and IC = 20 A.