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Product Detailed Parameters
- Description：IGBT 600V 7.5A TO-220FP
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：7.5 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：2.95V @ 15V, 1.5A
- Power - Max：18 W
- Switching Energy：19µJ (on), 12µJ (off)
- Input Type：Standard
- Gate Charge：12 nC
- Td (on/off) @ 25°C：11ns/60ns
- Test Condition：400V, 1.5A, 100Ohm, 15V
- Reverse Recovery Time (trr)：85 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FP
- Grade：-
- Qualification：-
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Overview
The STGF3HF60HD is a 7 A, 600 V N-channel IGBT from the PowerMESH™ family. It utilizes a patented strip layout for high-frequency optimization, achieving very high switching performances with reduced fall time while maintaining low voltage drop. The device features minimal tail current and low conduction losses. It integrates an ultrafast soft recovery antiparallel diode to minimize reverse recovery effects. Additionally, it exhibits a low CRES/CIES ratio, which reduces susceptibility to cross-conduction in bridge configurations.
Feature Summary
- Optimized for high-frequency applications through advanced planar technology
- Ultrafast soft recovery integrated antiparallel diode
- Low CRES/CIES ratio to prevent cross-conduction
Applications
- High-frequency power conversion circuits
- Motor control inverters
- Switching power supplies requiring fast recovery characteristics
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the package type, typically TO-220AB or TO-220FP, with your PCB footprint design before finalizing procurement orders.
Selection Notes
Select this component when circuit designs demand high switching frequencies combined with low conduction losses. The integrated ultrafast diode makes it suitable for hard-switching topologies where reverse recovery charge is critical. Evaluate the thermal resistance of the chosen package variant against the expected junction temperature rise under maximum load conditions.
Part Context
This part belongs to STMicroelectronics' PowerMESH™ IGBT family, characterized by trench-gate field-stop technology. It is designed to offer an optimal balance between conduction and switching efficiency. The 'H' suffix specifically denotes optimization for high-frequency operation, distinguishing it from standard variants within the broader product line.
Replacement Considerations
Compatible replacements include other STPowerMESH™ devices such as STGP3HF60HD or STGD3HF60HD, provided the current rating and package dimensions match the existing design constraints. Verify that substitute parts maintain similar switching speed and diode recovery characteristics to ensure circuit stability.
