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The STGF5H60DF is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the H series, manufactured by STMicroelectronics. It utilizes a proprietary trench gate field-stop structure to optimize the balance between conduction and switching losses for high-frequency converters. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 5 A at 25°C. The device features a low thermal resistance and a slightly positive VCE(sat) temperature coefficient. It operates within a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 30 W in a TO-220 package.
Verify the specific suffix 'DF' against the manufacturer's official datasheet to confirm pinout configuration and packaging details. Ensure the component matches the required 600 V rating and 5 A current capacity for the target circuit design before procurement.
Select this IGBT for applications demanding a compromise between low conduction and switching losses. The tight parameter distribution facilitates parallel operation. Verify that the 600 V blocking voltage and 5 A current rating exceed the peak operational stresses of the intended load.
This component belongs to the ST H-series IGBT family, which employs trench gate field-stop technology. This series is designed to maximize efficiency in high-frequency converters by balancing conduction and switching losses, distinguishing it from standard planar IGBTs.
Direct substitutes within the same series include STGP5H60DF and STGD5H60DF. These parts share identical electrical characteristics and the trench gate field-stop structure. Verify package compatibility and suffix variations when substituting.