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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 14A TO-220FP
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：28 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 7A
- Power - Max：24 W
- Switching Energy：99µJ (on), 100µJ (off)
- Input Type：Standard
- Gate Charge：46 nC
- Td (on/off) @ 25°C：30ns/160ns
- Test Condition：400V, 7A, 47Ohm, 15V
- Reverse Recovery Time (trr)：136 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FP
- Grade：-
- Qualification：-
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Overview
The STGF7H60DF is an N-channel IGBT from the H series, utilizing a trench gate field-stop structure. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 7 A at 25°C. The device operates with a maximum junction temperature of 175°C and a switching frequency up to 1 MHz. Key electrical parameters include a maximum collector-emitter saturation voltage of 2 V and a maximum gate-emitter voltage of ±20 V. It is housed in a TO-220 package for through-hole mounting.
Feature Summary
- High-speed switching capability optimized for high-frequency converters
- Tight parameter distribution enabling safer paralleling operation
- Integrated ultrafast soft recovery antiparallel diode
Applications
- High-switching frequency power converters
- Motor drive systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheets. Confirm package integrity and pin configuration before integration. Ensure storage conditions align with semiconductor handling standards to prevent moisture damage or electrostatic discharge during assembly processes.
Selection Notes
Select this component for applications requiring a balance between conduction efficiency and switching speed. The 600V rating suits medium-voltage industrial environments. Consider thermal management requirements due to the specific power dissipation characteristics inherent to the TO-220 package and trench gate technology.
Part Context
This part belongs to the STMicroelectronics H series of IGBTs, designed using proprietary trench gate field-stop technology. The series aims to optimize the trade-off between conduction and switching losses. It shares architectural similarities with other H-series variants like the STGF15H60DF but differs in current ratings and specific package configurations.
Replacement Considerations
Direct substitutes within the same family include the STGF15H60DF for higher current needs. Verify compatibility regarding thermal resistance and pinout when considering alternative packages such as TO-247 variants like the STGW30V60DF for different power levels.
